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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4105 DESCRIPTION *With TO-220C package *High breakdown voltage *Fast switching speed *Wide area of safe operation APPLICATIONS *For switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 4 8 1.5 40 150 -55~150 UNIT V V V A A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 hFE-3 fT Cob PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=5mA ;RBE= IC=1mA; IE=0 IE=1mA; IC=0 IC=2A; IB=0.4A IC=2A; IB=0.4A VCB=400V ;IE=0 VEB=5V; IC=0 IC=0.4A ; VCE=5V IC=2A ; VCE=5V IC=10mA ; VCE=5V IC=0.4A ; VCE=10V f=1MHz ; VCB=10V 15 10 10 20 50 MIN 400 500 7 2SC4105 TYP. MAX UNIT V V V 0.8 1.5 10 10 50 V V A A MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=3A, IB1=0.6A IB2=-1.2A; VCC=200V RL=66.6 0.5 2.5 0.3 s s s hFE-1 Classifications L 15-30 M 20-40 N 30-50 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4105 Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4105 4 |
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